ion diffusion into silicon carbide in hong kong

Self-diffusion in isotopically enriched …

26.07.2004· Diffusion of C13 and Si30 in silicon carbide was performed with isotopically enriched 4H-Si28C12∕natSiC heterostructures which were grown by chemical vapor phase epitaxy. After diffusion annealing at temperatures between 2000°C and 2200°C the Si30 and C13 profiles were measured by means of secondary ion mass spectrometry. We found that the Si and C diffusivity …

Enhanced Ion Conductivity in Conducting …

08.01.2018· Enhanced Ion Conductivity in Conducting Polymer Binder for High‐Performance Silicon Anodes in Advanced Lithium‐Ion Batteries. City University of Hong Kong, Tat Chee Avenue, Kowloon The polymer binder shows lithium‐ion diffusivity and electron conductivity that are 14 and 90 times higher than those of the widely

Enhanced Ion Conductivity in Conducting …

08.01.2018· Enhanced Ion Conductivity in Conducting Polymer Binder for High‐Performance Silicon Anodes in Advanced Lithium‐Ion Batteries. City University of Hong Kong, Tat Chee Avenue, Kowloon The polymer binder shows lithium‐ion diffusivity and electron conductivity that are 14 and 90 times higher than those of the widely

NANOFLUIDICS Atomic-scale ion transistor with ultrahigh

Faculty of Engineering, University of Hong Kong, Hong Kong, China. †These authors contributed equally to this work. *Corresponding author. Email: [email protected] Fig. 1. Experimental setup and ultrafast ion permeation. (A) Schematic of our atomic-scale graphene channel device with electric potential control using a three-electrode configuration.

Scaling down Ionic Transistors to ultimate …

12.05.2021· Researchers led by Professor Xiang Zhang, the President of the University of Hong Kong (HKU), have developed an atomic-scale ion transistor based on electrically gated graphene channels of around 3 angstrom width which demonstrated highly selective ion transport.

Diffusion of ion implanted aluminum in …

07.05.2021· Diffusion of aluminum in silicon carbide was studied by Al implantation into single crystal SiC and subsequent profile analyses by secondary ion mass spectrometry (SIMS). The bulk diffusion coefficient of Al at temperatures between 1350 and 1800 /sup 0/C was determined to be D(cm/sup 2//s) = 1.3 x 10/sup -8/ exp (-231 kJ/mol/RT).

Other High Temperature Processes - …

Silicon Carbide Solutions. TENMAT has developed an engineered reaction bonded silicon carbide material which has successfully been integrated into advanced equipment throughout industry, meeting the needs of major players in several market demanding segments.

SiC silicon carbide electronic, …

Technology, production, manufacturing and equipment for SiC electronic. Silicon carbide is a wide band semiconductor material with special properties, which allows operation at high temperature and is is particularly suitable for power semiconductors.

Silicon Carbide (SiC) - Oxford Instruments

Silicon Carbide (SiC) has electronic and physical properties that offers superior performance devices for high power appliions. It is also used as a substrate to grow high-quality Gallium Nitride (GaN) enabling fast switching, high power RF devices. SiC may be etched using Inductively Coupled Plasma Etching (ICP)and deposited using Plasma Enhanced Chemical …

Scaling down Ionic Transistors to ultimate …

12.05.2021· Researchers led by Professor Xiang Zhang, the President of the University of Hong Kong (HKU), have developed an atomic-scale ion transistor based on electrically gated graphene channels of around 3 angstrom width which demonstrated highly selective ion transport.

Dissertation: Thermal Oxidation and …

1.2.5 Ion Implantation. 1.2.6 Annealing and Diffusion. 1.2.7 Dicing and Packaging. The oxidation technique forces an oxidizing agent to diffuse into the wafer at high temperatures (usually above 700°C) Thermal Oxidation and Dopant Activation of Silicon Carbide.

Adsorption and Diffusion of Lithium on …

The energy density of Li-ion batteries depends critically on the specific charge capacity of the constituent electrodes. Silicene, the silicon analogue to graphene, being of atomic thickness could serve as high-capacity host of Li in Li-ion secondary batteries. In this work, we employ first-principles calculations to investigate the interaction of Li with Si in model electrodes of free

Self-diffusion in isotopically enriched …

26.07.2004· Diffusion of C13 and Si30 in silicon carbide was performed with isotopically enriched 4H-Si28C12∕natSiC heterostructures which were grown by chemical vapor phase epitaxy. After diffusion annealing at temperatures between 2000°C and 2200°C the Si30 and C13 profiles were measured by means of secondary ion mass spectrometry. We found that the Si and C diffusivity …

Enhanced Ion Conductivity in Conducting …

08.01.2018· Enhanced Ion Conductivity in Conducting Polymer Binder for High‐Performance Silicon Anodes in Advanced Lithium‐Ion Batteries. City University of Hong Kong, Tat Chee Avenue, Kowloon The polymer binder shows lithium‐ion diffusivity and electron conductivity that are 14 and 90 times higher than those of the widely

The diffusion bonding of silicon carbide and …

01.10.1999· Joining is an enabling technology for the appliion of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding.

Review of laser microscale processing of …

25.03.2011· A review of various laser techniques for microscale processing of SiC for microelectronics and microelectromechanical-system appliions is presented. SiC is an excellent material for harsh environments due to its outstanding mechanical, thermal, and chemical properties. However, its extreme thermodynamic stability and inert properties created …

Silicide - an overview | ScienceDirect Topics

In Fundamentals and Appliions of Nano Silicon in Plasmonics and Fullerines, 2018. 11.3.2 Nanostructured Silicide. Nanostructured silicide may be formed by depositing ultrathin (∼1 nm) metal film on silicon surfaces. The metal may react with the silicon substrate to form silicide nanodots under appropriate annealing conditions. Ion implantation of metal ions, for example into …

Laser Endotaxy and PIN Diode Fabriion …

Dual-beam instruments incorporate both an electron column and an ion column into a the diffusion of dopants in silicon carbide. Hong and R. F. Davis, " Self-diffusion of carbon-13

PolyU Electronic Theses: A novel approach …

In this technique, one ion gun was used to sputter a boron (B) target, while another ion gun was used to generate an assist ion beam containing nitrogen (N) and argon (Ar) ions to board the growing film surface. Two types of substrates were used, i.e. (100) single crystal silicon and tungsten carbide (WC).

Solutions for the problems of silicon–carbon …

06.06.2018· Silicon–carbon anodes have demonstrated great potential as an anode material for lithium-ion batteries because they have perfectly improved the problems that existed in silicon anodes, such as the particle pulverization, shedding and failures of electrochemical performance during lithiation and delithiation.

Atomic-scale ion transistor with ultrahigh …

30.04.2021· Cells are adept at fast, gated ion flow through tailored channels, which is key to many biological processes. Xue et al. developed ion transistors from reduced graphene oxide meranes and observed a field-enhanced diffusivity of the ions (see the Perspective by Hinds). By applying electrical gating, the average surface potential on the graphene layer …

Silicon/Carbon Composite Anode Materials …

14.02.2019· Silicon (Si) is a representative anode material for next-generation lithium-ion batteries due to properties such as a high theoretical capacity, suitable working voltage, and high natural abundance. However, due to inherently large volume expansions (~ 400%) during insertion/deinsertion processes as well as poor electrical conductivity and unstable solid …

Self-diffusion in isotopically enriched …

26.07.2004· Diffusion of C13 and Si30 in silicon carbide was performed with isotopically enriched 4H-Si28C12∕natSiC heterostructures which were grown by chemical vapor phase epitaxy. After diffusion annealing at temperatures between 2000°C and 2200°C the Si30 and C13 profiles were measured by means of secondary ion mass spectrometry. We found that the Si and C diffusivity …

Hydrogen diffusion and ion implantation in silicon carbide

Secondary ion mass spectrometry (SIMS) has been employed to study the spatial distributions resulting from mass transport by diffusion and ion implantation in single crystal silicon carbide (SiC). By a systematic analysis of this data, fundamental processes that govern these phenomena have been derived.

Laser Endotaxy and PIN Diode Fabriion …

Dual-beam instruments incorporate both an electron column and an ion column into a the diffusion of dopants in silicon carbide. Hong and R. F. Davis, " Self-diffusion of carbon-13

Diffusion of ion implanted aluminum in …

31.08.1998· Diffusion of aluminum in silicon carbide was studied by Al implantation into single crystal SiC and subsequent profile analyses by secondary ion mass spectrometry (SIMS). The bulk diffusion coefficient of Al at temperatures between 1350 and 1800 °C was determined to be D (cm 2 /s) = 1.3×10 −8 exp (−231 kJ/mol/ RT ).

SiC silicon carbide electronic, …

Technology, production, manufacturing and equipment for SiC electronic. Silicon carbide is a wide band semiconductor material with special properties, which allows operation at high temperature and is is particularly suitable for power semiconductors.

Silicon Carbide Powder Appliion - …

Silicon Carbide Powder Appliion: Silicon Carbide is the only chemical compound of carbon and silicon. It was originally produced by a high temperature electro-chemical reaction of sand and carbon. Silicon carbide is an excellent abrasive and has been produced and made into grinding wheels and other abrasive products for over one hundred years.